PART |
Description |
Maker |
IPP50CN10NG IPP50CN10NG10 IPI50CN10NG IPB50CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPP04N03LBG IPP04N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPI80CN10NG IPP80CN10NG10 IPB80CN10NG IPD80CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPF09N03LBG |
OptiMOS2 Power-Transistor 的OptiMOS2功率晶体
|
Infineon Technologies AG
|
IPB06N03LB |
OptiMOS2 Power-Transistor 的OptiMOS2功率晶体
|
Infineon Technologies AG
|
BSO150N03 |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 15mOhm, 9.1A, LL, dual OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSO350N03 |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 35mOhm, 6.0A, LL, dual OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSR302N |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
BSL205N |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
BSB019N03LXG |
OptiMOS2 Power-MOSFET
|
Infineon Technologies AG
|
IPU07N03LA |
OptiMOS®2 - Power packages OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ?的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员?
|
Infineon Toshiba, Corp.
|